MOSFET P-CH 250V 3.1A IPAK FQU4P25TU
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Description:
MOSFET P-CH 250V 3.1A IPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FQU4P25TU(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory40795,Price reference "real-time change" China/Hongkong。 FQU4P25TU package/specs, Download FQU4P25TU、Datasheet。