MOSFET P-CH 100V 8.2A TO220F FQPF12P10
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Description:
MOSFET P-CH 100V 8.2A TO220F
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FQPF12P10(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory41697,Price reference "real-time change" China/Hongkong。 FQPF12P10 package/specs, Download FQPF12P10、Datasheet。