MOSFET N-CH 400V 2.5A I2PAK FQI3N40TU
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Description:
MOSFET N-CH 400V 2.5A I2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FQI3N40TU(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory34619,Price reference "real-time change" China/Hongkong。 FQI3N40TU package/specs, Download FQI3N40TU、Datasheet。