MOSFET N-CH 55V 19A DPAK HUF75309D3ST
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Description:
MOSFET N-CH 55V 19A DPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
HUF75309D3ST(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory65973,Price reference "real-time change" China/Hongkong。 HUF75309D3ST package/specs, Download HUF75309D3ST、Datasheet。