MOSFET N-CH 200V 9A D2PAK FQB630TM
The pictures are for reference only
Description:
MOSFET N-CH 200V 9A D2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FQB630TM(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory84336,Price reference "real-time change" China/Hongkong。 FQB630TM package/specs, Download FQB630TM、Datasheet。