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    Home/    Category/    MOSFET/    FQB2P25TM

    MOSFET P-CH 250V 2.3A D2PAK FQB2P25TM

    FQB2P25TM image
    The pictures are for reference only
    Brand:
    ON
    Model:
    FQB2P25TM
    Description:
    MOSFET P-CH 250V 2.3A D2PAK
    Stock:
    31289
    Type:
    goods in stock
    Store:
    Shenzhen/Hong kong
    DataSheet:
    ECAD Model:
    Offer
    Contact UsContact Us
    座机icoTel ：0755-82988826
    手机icoPhone：13794459602(Wechat)
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    产品参数icoParameters
  • Current at 25 ° C - continuous drain (Id)
    2.3A(Tc)
  • Drain source voltage (Vdss)
    250 V
  • Drive voltage (maximum RdsOn, minimum RdsOn)
    10V
  • FET Type
    P channels
  • FET function
    -
  • Gate charge (Qg) at different Vgs (maximum)
    8.5 nC @ 10 V
  • Input capacitance at different Vds (Ciss) (maximum)
    250 pF @ 25 V
  • On resistance (maximum) for different Ids and Vgs
    4 Ω @ 1.15A,10V
  • Power dissipation (maximum)
    3.13W(Ta),52W(Tc)
  • Vgs (max)
    ±30V
  • Vgs (th) (maximum) for different Ids
    5V @ 250µA
  • packing
    TR
  • series
    QFET®
  • technology
    MOSFET(Metal oxide)
  • working temperature
    -55°C ~ 150°C(TJ)
  • Encapsulation/Housing
    D²PAK(TO-263)
  • Country of origin
    USA
  • Warehouse
    China/Hong Kong
  • quality
    Original genuine
  • Installation type
    Surface mount
  • Part status
    stop production
    • PDFicoDataSheet
    FQB2P25TM（MOSFET）ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory31289,Price reference "real-time change" China/Hongkong。 FQB2P25TM package/specs, Download FQB2P25TM、Datasheet。
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    ICQQG images/c2fc46c3cfa96cda43d701b26ccc08fe.jpg
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