MOSFET N-CH 100V 19A TO220-3 FQP19N10L
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Description:
MOSFET N-CH 100V 19A TO220-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FQP19N10L(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory21031,Price reference "real-time change" China/Hongkong。 FQP19N10L package/specs, Download FQP19N10L、Datasheet。