MOSFET N-CH 100V 12A DPAK NTD12N10T4G
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Description:
MOSFET N-CH 100V 12A DPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
NTD12N10T4G(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory34798,Price reference "real-time change" China/Hongkong。 NTD12N10T4G package/specs, Download NTD12N10T4G、Datasheet。