MOSFET N-CH 20V 20A TO252AA HUF76009D3ST
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Description:
MOSFET N-CH 20V 20A TO252AA
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
HUF76009D3ST(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory11878,Price reference "real-time change" China/Hongkong。 HUF76009D3ST package/specs, Download HUF76009D3ST、Datasheet。