MOSFET N-CH 100V 19A D2PAK FQB19N10LTM
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Description:
MOSFET N-CH 100V 19A D2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FQB19N10LTM(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory42824,Price reference "real-time change" China/Hongkong。 FQB19N10LTM package/specs, Download FQB19N10LTM、Datasheet。