MOSFET N-CH 60V 4.1A SOT89-3 DMN6070SY-13
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Description:
MOSFET N-CH 60V 4.1A SOT89-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
DMN6070SY-13(MOSFET)ByDiodesDesign and production, ICQQG Electronic component purchase website provides sufficient inventory63672,Price reference "real-time change" China/Hongkong。 DMN6070SY-13 package/specs, Download DMN6070SY-13、Datasheet。