MOSFET N-CH 200V 9A I2PAK IRLW630ATM
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Description:
MOSFET N-CH 200V 9A I2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IRLW630ATM(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory46292,Price reference "real-time change" China/Hongkong。 IRLW630ATM package/specs, Download IRLW630ATM、Datasheet。