MOSFET P-CH 100V 16.5A D2PAK FQB17P10TM
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Description:
MOSFET P-CH 100V 16.5A D2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FQB17P10TM(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory42072,Price reference "real-time change" China/Hongkong。 FQB17P10TM package/specs, Download FQB17P10TM、Datasheet。