MOSFET N-CH 600V 2.4A D2PAK FQB2N60TM
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Description:
MOSFET N-CH 600V 2.4A D2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FQB2N60TM(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory31042,Price reference "real-time change" China/Hongkong。 FQB2N60TM package/specs, Download FQB2N60TM、Datasheet。