MOSFET N-CH 55V 49A D2PAK HUF75329S3
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Description:
MOSFET N-CH 55V 49A D2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
HUF75329S3(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory80975,Price reference "real-time change" China/Hongkong。 HUF75329S3 package/specs, Download HUF75329S3、Datasheet。