MOSFET N-CH 650V 7A TO220-3 FQP7N65C
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Description:
MOSFET N-CH 650V 7A TO220-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FQP7N65C(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory8254,Price reference "real-time change" China/Hongkong。 FQP7N65C package/specs, Download FQP7N65C、Datasheet。