MOSFET N-CH 900V 3.6A I2PAK FQI3N90TU
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Description:
MOSFET N-CH 900V 3.6A I2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FQI3N90TU(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory25914,Price reference "real-time change" China/Hongkong。 FQI3N90TU package/specs, Download FQI3N90TU、Datasheet。