MOSFET N-CH 200V 19.4A I2PAK FQI19N20TU
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Description:
MOSFET N-CH 200V 19.4A I2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FQI19N20TU(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory55872,Price reference "real-time change" China/Hongkong。 FQI19N20TU package/specs, Download FQI19N20TU、Datasheet。