MOSFET N-CH 500V 5.3A TO220F-3 FQPF9N50YDTU
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Description:
MOSFET N-CH 500V 5.3A TO220F-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FQPF9N50YDTU(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory1721,Price reference "real-time change" China/Hongkong。 FQPF9N50YDTU package/specs, Download FQPF9N50YDTU、Datasheet。