MOSFET N-CH 200V 28A D2PAK FQB32N20CTM
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Description:
MOSFET N-CH 200V 28A D2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FQB32N20CTM(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory87680,Price reference "real-time change" China/Hongkong。 FQB32N20CTM package/specs, Download FQB32N20CTM、Datasheet。