MOSFET N-CH 60V 100A 8SOP TPH1R306PL,L1Q
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Description:
MOSFET N-CH 60V 100A 8SOP
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
TPH1R306PL,L1Q(MOSFET)ByToshibaDesign and production, ICQQG Electronic component purchase website provides sufficient inventory40349,Price reference "real-time change" China/Hongkong。 TPH1R306PL,L1Q package/specs, Download TPH1R306PL,L1Q、Datasheet。