MOSFET N-CH 500V 20A TO3P FQA18N50V2
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Description:
MOSFET N-CH 500V 20A TO3P
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FQA18N50V2(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory79960,Price reference "real-time change" China/Hongkong。 FQA18N50V2 package/specs, Download FQA18N50V2、Datasheet。