MOSFET N-CH 500V 12.1A I2PAK FQI12N50TU
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Description:
MOSFET N-CH 500V 12.1A I2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FQI12N50TU(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory29308,Price reference "real-time change" China/Hongkong。 FQI12N50TU package/specs, Download FQI12N50TU、Datasheet。