MOSFET N-CH 25V 35A I-PAK FDU8770
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Description:
MOSFET N-CH 25V 35A I-PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FDU8770(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory86739,Price reference "real-time change" China/Hongkong。 FDU8770 package/specs, Download FDU8770、Datasheet。