MOSFET N-CH 60V 7.4A/37A DPAK FDD5810
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Description:
MOSFET N-CH 60V 7.4A/37A DPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FDD5810(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory21725,Price reference "real-time change" China/Hongkong。 FDD5810 package/specs, Download FDD5810、Datasheet。