MOSFET N-CH 20V 21A 8SO FDS6162N3
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Description:
MOSFET N-CH 20V 21A 8SO
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FDS6162N3(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory60459,Price reference "real-time change" China/Hongkong。 FDS6162N3 package/specs, Download FDS6162N3、Datasheet。