MOSFET N-CH 500V 380MA TO92-3 FQN1N50CBU
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Description:
MOSFET N-CH 500V 380MA TO92-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FQN1N50CBU(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory55532,Price reference "real-time change" China/Hongkong。 FQN1N50CBU package/specs, Download FQN1N50CBU、Datasheet。