MOSFET N-CH 60V 18A IPAK NTD18N06-1G
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Description:
MOSFET N-CH 60V 18A IPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
NTD18N06-1G(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory65877,Price reference "real-time change" China/Hongkong。 NTD18N06-1G package/specs, Download NTD18N06-1G、Datasheet。