MOSFET N-CH 30V 11.3A/79A IPAK NTD4806N-1G
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Description:
MOSFET N-CH 30V 11.3A/79A IPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
NTD4806N-1G(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory93194,Price reference "real-time change" China/Hongkong。 NTD4806N-1G package/specs, Download NTD4806N-1G、Datasheet。