MOSFET N-CH 30V 9.6A/58A IPAK NTD4809NH-1G
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Description:
MOSFET N-CH 30V 9.6A/58A IPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
NTD4809NH-1G(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory43556,Price reference "real-time change" China/Hongkong。 NTD4809NH-1G package/specs, Download NTD4809NH-1G、Datasheet。