MOSFET P-CH 20V 2.7A SUPERSOT6 NDC632P
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Description:
MOSFET P-CH 20V 2.7A SUPERSOT6
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
NDC632P(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory94840,Price reference "real-time change" China/Hongkong。 NDC632P package/specs, Download NDC632P、Datasheet。