MOSFET N-CH 100V 5.2A 8SOIC FDS3680
The pictures are for reference only
Description:
MOSFET N-CH 100V 5.2A 8SOIC
Contact Us
Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FDS3680(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory8011,Price reference "real-time change" China/Hongkong。 FDS3680 package/specs, Download FDS3680、Datasheet。