MOSFET N-CH 20V 3A SUPERSOT3 FDN339AN_G
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Description:
MOSFET N-CH 20V 3A SUPERSOT3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FDN339AN_G(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory29880,Price reference "real-time change" China/Hongkong。 FDN339AN_G package/specs, Download FDN339AN_G、Datasheet。