MOSFET N-CH 60V 12.1A SOT223-4 FDT55AN06LA0
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Description:
MOSFET N-CH 60V 12.1A SOT223-4
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FDT55AN06LA0(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory61064,Price reference "real-time change" China/Hongkong。 FDT55AN06LA0 package/specs, Download FDT55AN06LA0、Datasheet。