TK12P60W,RVQ(S parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Toshiba

Model:

TK12P60W,RVQ(S

Description:

MOSFET N-CH 600V 11.5A DPAK

Stock:

68703

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Offer

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Parameters

Current at 25 ° C - continuous drain (Id)

11.5A(Ta)

Drain source voltage (Vdss)

600 V

Drive voltage (maximum RdsOn, minimum RdsOn)

10V

FET Type

N channels

FET function

Gate charge (Qg) at different Vgs (maximum)

25 nC @ 10 V

Input capacitance at different Vds (Ciss) (maximum)

890 pF @ 300 V

On resistance (maximum) for different Ids and Vgs

340 mΩ @ 5.8A,10V

Power dissipation (maximum)

100W(Tc)

Vgs (max)

±30V

Vgs (th) (maximum) for different Ids

3.7V @ 600µA

packing

series

DTMOSIV

technology

MOSFET(Metal oxide)

working temperature

150°C

Encapsulation/Housing

DPAK

Country of origin

Japan

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

On sale

DataSheet

TK12P60W,RVQ(S（MOSFET）ByToshibaDesign and production, ICQQG Electronic component purchase website provides sufficient inventory68703,Price reference "real-time change" China/Hongkong。 TK12P60W,RVQ(S package/specs, Download TK12P60W,RVQ(S、Datasheet。