MOSFET N-CH 500V 10A D2PAK FDB12N50UTM_WS
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Description:
MOSFET N-CH 500V 10A D2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FDB12N50UTM_WS(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory410,Price reference "real-time change" China/Hongkong。 FDB12N50UTM_WS package/specs, Download FDB12N50UTM_WS、Datasheet。