MOSFET N-CH 30V 4.9A CHIPFET NTHS5402T1
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Description:
MOSFET N-CH 30V 4.9A CHIPFET
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
NTHS5402T1(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory19208,Price reference "real-time change" China/Hongkong。 NTHS5402T1 package/specs, Download NTHS5402T1、Datasheet。