MOSFET P-CH 100V 6.6A DPAK FQD8P10TF_NB82052
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Description:
MOSFET P-CH 100V 6.6A DPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FQD8P10TF_NB82052(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory30660,Price reference "real-time change" China/Hongkong。 FQD8P10TF_NB82052 package/specs, Download FQD8P10TF_NB82052、Datasheet。