MOSFET N-CH 20V 4A MICROFET FDFM2N111
The pictures are for reference only
Description:
MOSFET N-CH 20V 4A MICROFET
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Schottky diode (isolated)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FDFM2N111(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory31581,Price reference "real-time change" China/Hongkong。 FDFM2N111 package/specs, Download FDFM2N111、Datasheet。