MOSFET P-CHANNEL 30V 27A ATPAK NVATS4A101PZT4G
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Description:
MOSFET P-CHANNEL 30V 27A ATPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
NVATS4A101PZT4G(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory34500,Price reference "real-time change" China/Hongkong。 NVATS4A101PZT4G package/specs, Download NVATS4A101PZT4G、Datasheet。