MOSFET N-CH 100V 19A DPAK NVD6416ANLT4G
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Description:
MOSFET N-CH 100V 19A DPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
NVD6416ANLT4G(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory10897,Price reference "real-time change" China/Hongkong。 NVD6416ANLT4G package/specs, Download NVD6416ANLT4G、Datasheet。