MOSFET N-CH 100V 19A DPAK NVD6416ANLT4G-001-VF01
The pictures are for reference only
Model:
NVD6416ANLT4G-001-VF01
Description:
MOSFET N-CH 100V 19A DPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
NVD6416ANLT4G-001-VF01(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory67659,Price reference "real-time change" China/Hongkong。 NVD6416ANLT4G-001-VF01 package/specs, Download NVD6416ANLT4G-001-VF01、Datasheet。