MOSFET N-CH 30V 9.6A/58A IPAK NTD4809NA-35G
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Description:
MOSFET N-CH 30V 9.6A/58A IPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
NTD4809NA-35G(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory91258,Price reference "real-time change" China/Hongkong。 NTD4809NA-35G package/specs, Download NTD4809NA-35G、Datasheet。