MOSFET N-CH 30V FDC655BN-F40
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Description:
MOSFET N-CH 30V
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FDC655BN-F40(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory94622,Price reference "real-time change" China/Hongkong。 FDC655BN-F40 package/specs, Download FDC655BN-F40、Datasheet。