NTMFS4C805NT1G parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Model:

NTMFS4C805NT1G

Description:

TRENCH 6 30V NCH

Stock:

86115

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Offer

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Parameters

Current at 25 ° C - continuous drain (Id)

11.9A(Ta)

Drain source voltage (Vdss)

30 V

Drive voltage (maximum RdsOn, minimum RdsOn)

4.5V,10V

FET Type

N channels

FET function

Gate charge (Qg) at different Vgs (maximum)

30 nC @ 10 V

Input capacitance at different Vds (Ciss) (maximum)

1972 pF @ 15 V

On resistance (maximum) for different Ids and Vgs

2.8 mΩ @ 30A,10V

Power dissipation (maximum)

770mW(Ta)

Vgs (max)

±20V

Vgs (th) (maximum) for different Ids

2.2V @ 250µA

packing

series

technology

MOSFET(Metal oxide)

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

5-DFN(5x6)(8-SOFL)

Country of origin

USA

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

On sale

DataSheet

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NTMFS4C805NT1G（MOSFET）ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory86115,Price reference "real-time change" China/Hongkong。 NTMFS4C805NT1G package/specs, Download NTMFS4C805NT1G、Datasheet。