FDS6685-NBCM003A parameter specification DataSheet and ECAD Model -ICQQG

Home/ Category/ MOSFET/ FDS6685-NBCM003A

The pictures are for reference only

Brand:

Model:

FDS6685-NBCM003A

Description:

P-CHANNEL LOGIC LEVEL POWERTRENC

Stock:

44619

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Offer

Tel ：0755-82988826

Phone：+86 19166251823(Wechat)

Q Q：3469113929

Email：online1@ssf-asia.com

Parameters

Current at 25 ° C - continuous drain (Id)

8.8A(Ta)

Drain source voltage (Vdss)

30 V

Drive voltage (maximum RdsOn, minimum RdsOn)

4.5V,10V

FET Type

P channels

FET function

Gate charge (Qg) at different Vgs (maximum)

24 nC @ 5 V

Input capacitance at different Vds (Ciss) (maximum)

1604 pF @ 15 V

On resistance (maximum) for different Ids and Vgs

20 mΩ @ 8.8A,10V

Power dissipation (maximum)

1W(Ta)

Vgs (max)

±25V

Vgs (th) (maximum) for different Ids

3V @ 250µA

packing

series

PowerTrench®

technology

MOSFET(Metal oxide)

working temperature

-55°C ~ 175°C(TJ)

Encapsulation/Housing

8-SOIC

Country of origin

USA

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

Final sale

DataSheet

SearchFDS6685-NBCM003A

FDS6685-NBCM003A（MOSFET）ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory44619,Price reference "real-time change" China/Hongkong。 FDS6685-NBCM003A package/specs, Download FDS6685-NBCM003A、Datasheet。