MOSFET N-CH 200V 4A 8SO PHK4NQ20T,518
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Description:
MOSFET N-CH 200V 4A 8SO
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
PHK4NQ20T,518(MOSFET)ByNXPDesign and production, ICQQG Electronic component purchase website provides sufficient inventory5015,Price reference "real-time change" China/Hongkong。 PHK4NQ20T,518 package/specs, Download PHK4NQ20T,518、Datasheet。