MOSFET N-CH 30V 8.6A 8SO DMN4800LSSQ-13
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Description:
MOSFET N-CH 30V 8.6A 8SO
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
DMN4800LSSQ-13(MOSFET)ByDiodesDesign and production, ICQQG Electronic component purchase website provides sufficient inventory89447,Price reference "real-time change" China/Hongkong。 DMN4800LSSQ-13 package/specs, Download DMN4800LSSQ-13、Datasheet。