MOSFET N-CH 100V 68.8A TO252 DMT10H010LK3-13
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Description:
MOSFET N-CH 100V 68.8A TO252
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
DMT10H010LK3-13(MOSFET)ByDiodesDesign and production, ICQQG Electronic component purchase website provides sufficient inventory11848,Price reference "real-time change" China/Hongkong。 DMT10H010LK3-13 package/specs, Download DMT10H010LK3-13、Datasheet。