MOSFET N-CH 100V 3.6A SOT223 DMN10H120SE-13
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Description:
MOSFET N-CH 100V 3.6A SOT223
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
DMN10H120SE-13(MOSFET)ByDiodesDesign and production, ICQQG Electronic component purchase website provides sufficient inventory8245,Price reference "real-time change" China/Hongkong。 DMN10H120SE-13 package/specs, Download DMN10H120SE-13、Datasheet。